N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● 175°C Operating Temperature ● High Current Handling Capability ● Avalanche Rated ● Fast Intrinsic Diode ● Low RDS(on) Advantages ● Easy to Mount ● Space Savings ● High Power De

文件：193.49 Kbytes 页数：6 Pages

IXYS

艾赛斯

N通道沟槽栅 Gen2 MOSFET

• 高电流性能（高达600A）\n• 较低的RDS(ON) 和栅极电荷(Qg)\n• Incorporates Littelfuse HiPerFETTM technology for fast power switching 性能\n• 雪崩功能;

Littelfuse

力特

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Features ● International Standard Packages ● 175°C Operating Temperature ● High Current Handling Capability ● Avalanche Rated ● Fast Intrinsic Diode ● Low RDS(on) Advantages ● Easy to Mount ● Space Savings ● High Power De

文件：193.49 Kbytes 页数：6 Pages

IXYS

艾赛斯

IXYS

艾赛斯

上传：深圳市宏捷佳电子科技有限公司

TO-247-3

IXYS/LITTELFUSE

上传：深圳市斌腾达科技有限公司