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KF4N80F

PowerMOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

KF4N80F

ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID

MORNSUNGuangzhou Jinshengyang Technology Co., Ltd

金升阳广州金升阳科技有限公司

KF4N80F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=800V,ID

KECKEC CORPORATION

KEC株式会社

KSM4N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

KSMB4N80

Greendeviceavailable.

KERSEMI

Kersemi Electronic Co., Ltd.

KSMF4N80

800VN-ChannelMOSFET

KERSEMI

Kersemi Electronic Co., Ltd.

MTB4N80E

TMOSPOWERFET4.0AMPERES800VOLTS

TMOSE-FETHighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithh

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP4N80

TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM

TMOSE-FET™PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

MTP4N80E

N-ChannelEnhancement-ModeSiliconGate

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MTP4N80E

TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM

TMOSE-FET™PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

详细参数

  • 型号:

    IXTM4N80A

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-204AC

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-3
102
询价
IXYS
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
IXYS
2004
4
公司优势库存 热卖中!!
询价
ISC/固电
23+
TO-3
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IXYS
2022+
TO-204AE
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
IXYS/艾赛斯
23+
TO-264
65000
原装正品 华强现货
询价
IXYS/艾赛斯
专业铁帽
TO-3
100
原装铁帽专营,代理渠道量大可订货
询价
IXYS
20+
TO3
35830
原装优势主营型号-可开原型号增税票
询价
IXYS
24+
TO-3
100
原装现货假一罚十
询价
IXYS
24+
NA
3000
进口原装正品优势供应
询价
更多IXTM4N80A供应商 更新时间2025-7-27 15:30:00