IXTV30N50PS

N-ChannelEnhancementModeAvalancheRated

N-ChannelEnhancementModeAvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-easytodriveandtoprotect Advantages •Easytomount •Spacesavings •Highpowerdensity

LPM30N50

SingleN-Channel,30V,50A,PowerMOSFET

MTE30N50E

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.150OHM

ISOTOPTMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewenergydesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhig

MTM30N50

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·Motordrive ·DC-DCconverter ·powerswitchandsolenoiddrive

MTM30N50

PowerFieldEffectTransistor

MTY30N50

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.15OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

MTY30N50E

N?묬hannelPowerMOSFET

MTY30N50E

TMOSPOWERFET30AMPERES500VOLTSRDS(on)=0.15OHM

TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi

RFP-30N50T-S

AluminumNitrideTermination30Watts,50W

SPL-I-AC-30N50

Microprocessor-ControlledIndustrialPowerSupply