OVERVIEW

IXYS extends its GenX3™ insulated gate bipolar transistor (IGBT) product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though (PT) technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.

To accommodate optimum part selection, designers have a choice in selecting between three sub-classes denoted A3, B3, and C3. These classifications allow designers to “dial in” the best compromise between static (conduction) and dynamic (switching) losses, improving over-all system efficiency in a variety of power conversion applications by balancing critical requirements such as switching frequency, efficiency, and cost structure. The A3-Class are optimized for low saturation voltage V(sat) and are well suited for applications requiring switching frequencies up to 5kHz. Similarly, the B3-Class offers low saturation voltages, but is optimized to accommodate applications that require “medium speed” switching operation from 5kHz to 40kHz. The C3-Class is optimized for “high speed” switching operation from 40kHz to 100kHz and resonant switching operation of up to 400kHz.

IXGH36N60A3属于分立半导体产品 > 晶体管 - UGBT、MOSFET - 单。IXYS Integrated Circuits Division制造生产的IXGH36N60A3晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。