首页 >IXGH22N50B其他三极管>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOK22N50isfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchecapabilitythispartscanbead | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
500V,22AN-ChannelMOSFET GeneralDescription TheAOT22N50&AOTF22N50havebeenfabricatedusinganadvancedhighvoltageMOSFETprocessthatisdesignedtodeliverhighlevelsofperformanceandrobustnessinpopularAC-DCapplications.ByprovidinglowRDS(on),CissandCrssalongwithguaranteedavalanchcapabili | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | AOSMD | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=22A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.22Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelMOSFET500V,22A,0.22廓 Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=24A) Applications 1.SwitchModePowerSupply(SMPS) 2.UninterruptiblePowerSupply 3.HighSpeedPowerSwitching Benefits 1.LowGateChargeQgresultsinSimpleDriveRequirement 2.ImprovedGate,AvalancheandDynamicdv/dtRuggedness 3.FullyCharacterizedCapacitan | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
HEXFET짰PowerMOSFET | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS) •UninterruptablePowerS | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET(Vdss=500V,Rds(on)max=0.23ohm,Id=22A) Applications SwitchModePowerSupply(SMPS) UninterruptIblePowerSupply HighSpeedPowerSwitching Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,AvalancheandDynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent | IRFInternational Rectifier 英飞凌英飞凌科技公司 | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor •DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=0.23Ω(MAX) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerMOSFET FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanchevoltage andcurrent •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note | VishayVishay Siliconix 威世科技 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS/艾赛斯 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS |
1809+ |
TO-247 |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS |
22+ |
NA |
18 |
加我QQ或微信咨询更多详细信息, |
询价 | ||
IXYS |
21+ |
TO247AD (IXGH) |
13880 |
公司只售原装,支持实单 |
询价 | ||
IXYS/艾赛斯 |
21+ROHS |
TO-247AD |
12300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
IXYS |
23+ |
TO247AD (IXGH) |
9000 |
原装正品，支持实单 |
询价 | ||
IXYS |
2022+ |
TO-247AD(IXGH) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
IXYS-艾赛斯 |
24+25+/26+27+ |
TO-247-3 |
2368 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
IXYS |
24+ |
TO-247-3 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
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