IXFX230N20TFETIGBTIC说明书PDF资料市场行情-114ic电子网

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IXFK230N20	文件：351.95 Kbytes Page：3 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=230A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.5mΩ,Typ. ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK230N20T	文件：144.73 Kbytes Page：5 Pages	GigaMOSPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFN230N20T	文件：149.01 Kbytes Page：5 Pages	GigaMOSPowerMOSFET GigaMOSPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •InternationalStandardPackage •miniBLOC,withAluminiumNitrideIsolation •Isolationvoltage2500V~ •HighCurrentHandlingCapability •FastIntrinsicDiode •AvalancheRated •LowRDS(o	IXYS IXYS Integrated Circuits Division	IXYS
IXFR230N20T	文件：197.98 Kbytes Page：6 Pages	GigaMOSPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS
IXFX230N20T	文件：144.73 Kbytes Page：5 Pages	GigaMOSPowerMOSFET	IXYS IXYS Integrated Circuits Division	IXYS

更多IXFX230N20TFETIGBTIC供应商更新时间2024-6-21 11:09:00