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|---|---|
| 1+ | 
首页>IXFH6N120P>芯片详情
IXFH6N120P_IXYS/艾赛斯_MOSFET POLAR HIPERFET WITH REDUCED RDS 1200V 6A诺美思科技
- 详细信息
- 规格书下载
产品属性
- 类型描述 
- 制造商编号:IXFH6N120P 
- 生产厂家:力特 
- Maximum On-Resistance @ 25 ℃ (Ohm):2.75 
- Continuous Drain Current @ 25 ℃ (A):6 
- Gate Charge (nC):92 
- Thermal resistance [junction-case](K/W):0.5 
- Configuration:Single 
- Package Type:TO-247 
- Power Dissipation (W):250 
- Maximum Reverse Recovery (ns):300 
- Sample Request:Yes 
- Check Stock:Yes 
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