首页 >IXFD64N60P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=85mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET PolarHV™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedp | IXYS IXYS Corporation | IXYS | ||
PolarHVHiPerFETPowerMOSFET | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=64A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=96mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVTMHiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features) ●Internationalstandardpackages ●Fastrecoverydiode ●UnclampedInductiveSwitching(UIS) rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●High | IXYS IXYS Corporation | IXYS |
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