首页 >IXFD180N15P>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PolarHiPerFETPowerMOSFET Polar™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •H | IXYS IXYS Corporation | IXYS | ||
PolarHTHiPerFETPowerMOSFET PolarHT™HiPerFETPowerMOSFET N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardpackage •EncapsulatingepoxymeetsUL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •Fastrecoverydiode •UnclampedInducti | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=150A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V APPLICATIONS ·Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHVHiPerFETPowerMOSFETISOPLUS247 PolarHV™HiPerFETPowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features •Internationalstandardisolatedpackage •ULrecognizedpackage •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipa | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=180A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHiPerFETPowerMOSFET Polar™HiPerFETPowerMOSFET N-ChannelEnhancementMode FastIntrinsicDiode AvalancheRated Features •Internationalstandardpackages •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect Advantages •Easytomount •Spacesavings •H | IXYS IXYS Corporation | IXYS | ||
HighCurrentMegaMOSTMFET Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easytomountwithonescrew (isolatedmountingscrewhole) | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PolarHTTMPowerMOSFETN-ChannelEnhancementMode Features ●Internationalstandardpackage ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomount ●Spacesavings ●Highpowerdensity | IXYS IXYS Corporation | IXYS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
