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IXFC60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=60A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFC60N20

HiPerFETMOSFETISOPLUS220TM

HiPerFET™MOSFETISOPLUS220™ ElectricallyIsolatedBackSurface N-ChannelEnhancementMode Highdv/dt,Lowtrr,HDMOS™Family Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintot

IXYS

IXYS Corporation

IXFH60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav

IXYS

IXYS Corporation

IXFH60N20

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=33mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH60N20F

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=60A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=38mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXFH60N20F

HiPerRFTMPowerMOSFETs

HiPerRFTMPowerMOSFETs F-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance-

IXYS

IXYS Corporation

IXFT60N20

HiPerFETPowerMOSFETs

HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt Features •Internationalstandardpackages •LowRDS(on) •RatedforunclampedInductiveloadswitching(UIS) •MoldingepoxiesmeetUL94V-0flammabilityclassification Advantages •Easytomount •Spacesav

IXYS

IXYS Corporation

IXFT60N20F

HiPerRFPowerMOSFETF-Class:MegaHertzSwitching

IXYS

IXYS Corporation

IXTA60N20T

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA60N20T

N-ChannelEnhancementModeForPDPDriversAvalancheRated

N-ChannelEnhancementModeForPDPDrivers AvalancheRated Features HighCurrentHandlingCapability 175°COperatingTemperature AvalancheRated FastIntrinsicRectifier LowRDS(on) Applications DC-DCConverters BatteryChargers Switch-ModeandResonant-Mode

IXYS

IXYS Corporation

供应商型号品牌批号封装库存备注价格
IXYS
24+
TO-263
5000
全现原装公司现货
询价
IXYS
23+
TO-263
50000
全新原装正品现货,支持订货
询价
IXYS/艾赛斯
21+
TO-263
10000
原装现货假一罚十
询价
IXYS/艾赛斯
22+
TO-263
6000
十年配单,只做原装
询价
IXYS/艾赛斯
23+
TO-263
6000
原装正品,支持实单
询价
IXYS
10+
TO-263
2400
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
IXYS/艾赛斯
22+
TO-263
25000
只做原装进口现货,专注配单
询价
IXYS
23+
TO-263
7000
询价
IXYS
25+
TO-263
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
IXYS
1931+
N/A
89
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更多IXFA60N20T供应商 更新时间2025-7-28 10:20:00