IXDN630中文资料30-Ampere Low-Side Ultrafast MOSFET Drivers数据手册Littelfuse规格书

描述 Description

The IXDD6301XDI630/1XDN630 high-speed gate drivers are especially well suited for driving the latest IXYS power MOSFETs and IGBTs. The IXD_630 output can source and sink 30A of peak current while producing voltage rise and fall times of less than 20ns. Internal circuitry eliminates cross conduction and current \"shoot-through,\"and the driver is virtually immune to latch up. Under-voltage lockout(UVLO) circuitry holds the output LOW until sufficient supply voltage is applied (12.5V for the IXD_630 versions, and 9V for the IXD_630M versions). Low propagation delays and fast, matched rise and fall times make the IXD_630 family ideal for very high frequency and high-power applications.

The IXDD630 is configured as a non-inverting driver with an enable. The IXDN630 is configured as a non-inverting driver, and the IXDI630 is configured as an inverting driver.

The IXD_630 family is available in a 5-pin TO-220(C), and a 5-pin TO-263(Yl) package.

特性 Features

• 30A Peak Source/Sink Drive Current
• High Operating Voltage Capability: 35V
• -40°C to +125°C Extended Operating Temperature Range
• Under-Voltage Lockout Protection
• Logic Input Withstands Negative Swing of up to 5V
• Fast Rise and Fall Times: < 20ns
• Low Propagation Delay Time
• Low 10A Supply Current
• Low Output Impedance

应用 Application

• Efficient Power MOSFET and IGBT Switching
• Switch Mode Power Supplies
• Motor Controls
• DC to DC Converters
• Class-D Switching Amplifiers
• Pulse Transformer Driver