IXDN602数据手册集成电路（IC）的栅极驱动器规格书PDF

描述 Description

The IXDF602/XDI6021XDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs. Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns.\r
The input of each driver is CMOS compatible, and isvirtually immune to latch up. Proprietary circuitry eliminates cross conduction and current\"shoot-through.\"Low propagation delay and fast, matched rise and fall times make the IXD_602 family ideal for high-frequency and high-power applications.\r
The IXDN602 is configured as a dual non-inverting driver, the IXDI602 is configured as a dual inverting driver, and the IXDF602 has one inverting and one non-inverting driver.\r
The lXD_602 family is available in a standard 8-pin DIP(Pl), an 8-pin SOIC(SIA), an 8-pin Power SOIC with an exposed metal back(SI), and an 8-pin DFN(D2) package.

特性 Features

• 2A Peak Source/Sink Drive Current\r
• Wide Operating Voltage Range: 4.5V to 35V\r
• -40°C to +125°C Extended Operating Temperature Range\r
• Logic Input Withstands Negative Swing of up to 5V\r
• Outputs May be Connected in Parallel for Higher Drive Current\r
• Matched Rise and Fall Times\r
• Low Propagation Delay Time\r
• Low 10A Supply Current\r
• Low Output Impedance

应用 Application

• Efficient Power MOSFET and IGBT Switching\r
• Switch Mode Power Supplies\r
• Motor Controls\r
• DC to DC Converters\r
• Class-D Switching Amplifiers\r
• Pulse Transformer Driver