Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS

Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS The IW4001B NOR gates provide the system designer with direct emplementation of the NOR function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package temperature range; 100 nA at 18 V and 25°C •

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INTEGRAL

Integral Corp.

Quad 2-Input NOR Gate High-Voltage Silicon-Gate CMOS

The IW4001B NOR gates provide the system designer with direct emplementation of the NOR function.• Operating Voltage Range: 3.0 to 18 V\n• Maximum input current of 1 µA at 18 V over full package temperature range; 100 nA at 18 V and 25°C\n• Noise margin (over full package temperature range):\n   1.0

INTEGRAL

GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound ● Glass passivated junction version of PG4001S thru PG4007S in A-405 package ● 1 ampere operation at TA=75 ¢J with no thermal runaway ● Exceeds environmenta

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PANJIT

強茂

Rectifiers

DESCRIPTION Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. FEATURES • Glass passivated • High maximum operating temperature • Low leakage current • Excell

文件：23.56 Kbytes 页数：5 Pages

PHI

PHI

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave transistor in a SOT440A metal ceramic flange package with collector connected to flange. FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR • Interdigitated structure provides high

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PHI

PHI