首页 >IT6263FN/BX>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast | JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司 | JINANJINGHENG | ||
Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring. ◆Thelowforwardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasingandcoupling diodesforfastswitch | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode | SYNSEMI SynSemi，Inc. | SYNSEMI | ||
SchottkyDiodes Features •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring. •Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitch | GE GE Industrial Company | GE | ||
SCHOTTKYBARRIERSWITCHINGDIODE Features ●LowForwardVoltageDrop ●GuardRingConstructionforTransient Protection ●FastSwitchingTime ●LowReverseCapacitance | DIODESDiodes Incorporated 美台半导体 | DIODES | ||
SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: •Forgeneralpurposeapplications •Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode | EIC EIC discrete Semiconductors | EIC | ||
SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:60VCURRENT:400mW FEATURES ◇Forgeneralpurposeapplications ◇Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandco | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SMALLSIGNALSCHOTTKYDIODES FEATURES •Forgeneralpurposeapplications •Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | JINGHENG | ||
1.3MHz,20關APowerEfficientRail-to-RailI/OOpAmps | LINERLinear Technology 凌力尔特凌特半导体 | LINER | ||
90MHz,2200V/關s30VLowPowerOpAmps | LINERLinear Technology 凌力尔特凌特半导体 | LINER |
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