Schottky Barrier Rectifier

FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability

文件：276 Kbytes 页数：3 Pages

ISC

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Field Effect Power Transistor

[GE] Features • High speed, high peak current switching • Inherent current sharing capability when paralleled • Directly interface to CMOS, DTL, TTL logic • Simple, straight-forward DC biasing • Inherent protection from thermal runaway • Reliable, low cost plastic package Applications • L

文件：220 Kbytes 页数：2 Pages

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FIELD EFFECT POWER TRANSISTOR

Features • High speed, high peak current switching • Inherent current sharing capability when paralleled • Directly interface to CMOS, DTL, TTL logic • Simple, straight-forward DC biasing • Inherent protection from thermal runaway • Reliable, low cost plastic package Applications • LED and

文件：789.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Logic Plus™

文件：9.6955 Mbytes 页数：19 Pages

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