IVN5001

Field Effect Power Transistor

[GE] Features •Highspeed,highpeakcurrentswitching •Inherentcurrentsharingcapabilitywhenparalleled •DirectlyinterfacetoCMOS,DTL,TTLlogic •Simple,straight-forwardDCbiasing •Inherentprotectionfromthermalrunaway •Reliable,lowcostplasticpackage Applications •L

IVN5001

FIELD EFFECT POWER TRANSISTOR

Features •Highspeed,highpeakcurrentswitching •Inherentcurrentsharingcapabilitywhenparalleled •DirectlyinterfacetoCMOS,DTL,TTLlogic •Simple,straight-forwardDCbiasing •Inherentprotectionfromthermalrunaway •Reliable,lowcostplasticpackage Applications •LEDand

K5001WHI

LogicPlus™

KBPC5001

TECHNICALSPECIFICATIONSOFSINGLE-PHASESILICONBRIDGERECTIFIER

FEATURES *MetalcaseforMaximumHeatDissipation *Surgeoverloadrating-400Amperes *Lowforwardvoltagedrop

KBPC5001

40,50AHIGHCURRENTBRIDGERECTIFIER

KBPC5001

SILICONBRIDGERECTIFIERS

KBPC5001

SILICONBRIDGERECTIFIERS

FEATURES Ratingto1000VPRV 500Amperessurgecapability Highefficincy Electricallyisolatedmetalcaseformaximumheat dissipation Mounting:thruholefor#8screwMounting

KBPC5001

50AHIGHCURRENTSINGLE-PHASEBRIDGERECTIFIER

Features ●DiffusedJunction ●LowReverseLeakageCurrent ●LowPowerLoss,HighEfficiency ●ElectricallyIsolatedMetalCasefor MaximumHeatDissipation ●CasetoTerminalIsolationVoltage2500V ●RecognizedFile#E157705

KBPC5001

CURRENT50.0AmperesVOLTAGE50to1000Volts

Features •DiffusedJunction •LowReverseLeakageCurrent •LowPowerLoss,HighEfficiency •SurgeOverloadRatingto400APeak •ElectricallyIsolatedMetalCaseforMaximumHeatDissipation •HighCaseDielectricStrengthof1500VRMS

KBPC5001

HIGHCURRENT15,25,35,50AMPS.SINGLEPHASEBRIDGERECTIFIERS