ISP33N10L

isc N-Channel MOSFET Transistor

KSM33N10

100VN-ChannelMOSFET

MTB33N10E

N?묬hannelPowerMOSFET

MTB33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.06Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

MTB33N10E

TMOSPOWERFET33AMPERES100VOLTS

TMOSE-FET™HighEnergyPowerFET N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET3.0AMPERES500VOLTSRDS(on)=3.0OHMS ThisadvancedhighvoltageTMOSE–FETisdesignedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Thisnewhighenergydevicealsooffer

MTP33N10

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MTP33N10E

N?묬hannelPowerMOSFET

MTP33N10E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=33A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=60mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

MTP33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE-FETPowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisadvancedTMOSE–FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain–to–sourcediodewithafastrecoverytime.Designedfor

MTW33N10E

TMOSPOWERFET33AMPERES100VOLTSRDS(on)=0.06OHM

TMOSE−FETPowerFieldEffectTransistorTO-247withIsolatedMountingHole N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSE-FETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thenewenergyefficientdesignalsooffersadrain-to-sourcediodewithafas