MTB33N10E中文资料摩托罗拉数据手册PDF规格书

TMOS E-FET™ High Energy Power FET

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS

This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offersa drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor control sand other inductive loads, the avalanche energy capability is specified toeliminate the guess work in designs where inductive loadsare switched and offer additional safety margin against unexpected voltage transients.

• Avalanche Energy Capability Specified at Elevated Temperature

• Low Stored Gate Charge for Efficient Switching

• Internal Source–to–Drain Diode Designed to Replace External

Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode

• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode