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ISO5852SQDWQ1

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1.A

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1.B

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWQ1

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1.A

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWRQ1.B

丝印:ISO5852SQ;Package:SOIC;ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 100-kV/μs Minimum Common-Mode T

文件:1.23968 Mbytes 页数:40 Pages

TI

德州仪器

ISO5852SQDWQ1

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件:1.66841 Mbytes 页数:42 Pages

TI

德州仪器

ISO5852SQDWRQ1

High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver

文件:1.66841 Mbytes 页数:42 Pages

TI

德州仪器

供应商型号品牌批号封装库存备注价格
22
QFP
10000
实单VX或者电话联系
询价
TI
23+
NA
10000
原装现货,实单价格可谈
询价
TI
24+
SMD
17900
门驱动器
询价
TI
25+
SOP-16
968
就找我吧!--邀您体验愉快问购元件!
询价
TI/德州仪器
25+
SOIC-16
8880
原装认准芯泽盛世!
询价
TI
25+
SOIC (DW)
6000
原厂原装,价格优势
询价
TI/德州仪器
23+
SOIC-16
9000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TI/德州仪器
23+
SOIC-16
9990
正规渠道,只有原装!
询价
TI/德州仪器
23+
SOIC-16
5000
只有原装,欢迎来电咨询!
询价
TI/德州仪器
21+
SOIC-16
9990
只有原装
询价
更多ISO5852SQ供应商 更新时间2021-11-10 17:24:00