丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

丝印：ISO5451Q；Package：SOIC；ISO5451-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features

1 Features 1• Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM Classification Level 3A – Device CDM Classification Level C6 • 50-kV/μs Minimum and 100-kV/μs

文件：999.86 Kbytes 页数：39 Pages

TI

德州仪器

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes 页数：39 Pages

TI

德州仪器

High-CMTI 2.5-A / 5-A Isolated IGBT, MOSFET Gate Driver

文件：1.49303 Mbytes 页数：39 Pages

TI

德州仪器