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IRFU9014

PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-5.1A)

Description ThirdGenerationHESFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9014) •StraightL

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRFU9014

P-CHANNELPOWERMOSFETS

FEATURES •LowerRDS(ON) •Improvedinductiveruggedness •Fastswitchingtimes •Ruggedpolysilicongatecellstructure •Lowerinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

SamsungSamsung Group

三星三星半导体

ISL9014IRGPZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRGPZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9014IRGPZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJBZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJBZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJBZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9014IRJCZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9014IRJCZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJCZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJMZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJMZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJMZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9014IRJNZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

ISL9014IRJNZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJNZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJRZ

DualLDOwithLowNoise,LowIQ,andHighPSRR

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJRZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

ISL9014IRJRZ

DualLDOwithLowNoise,LowIQandHighPSRR

DualLDOwithLowNoise,LowIQandHighPSRR ISL9014isahighperformancedualLDOcapableofsourcing300mAcurrentfrombothoutputs.Thedevicehasalowstandbycurrentandhigh-PSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Features •Integratestwohi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

产品属性

  • 产品编号:

    ISL9014IRGCZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 线性 + 开关稳压器

  • 包装:

    剪切带(CT)

  • 电流 - 输出:

    300mA

  • 工作温度:

    -40°C ~ 85°C

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    10-VFDFN 裸露焊盘

  • 供应商器件封装:

    10-DFN(3x3)

  • 描述:

    IC REG LDO 2.7V/1.8V 0.3A 10DFN

供应商型号品牌批号封装库存备注价格
intersil
16+
原厂封装
10000
全新原装正品,代理优势渠道供应,欢迎来电咨询
询价
Intersil
23+
10-DFN
4624
原装现货
询价
INTERSIL
20+
DFN-10
1001
就找我吧!--邀您体验愉快问购元件!
询价
Intersil
22+
10-VFDFN
9000
原厂渠道,现货配单
询价
Renesas Electronics America In
24+
10-VFDFN 裸露焊盘
9350
独立分销商,公司只做原装,诚心经营,免费试样正品保证
询价
XICOR
23+
DFN10(3x3)
6000
诚信服务,绝对原装原盘
询价
Intersil
2318+
VFDFN-10
6890
长期供货进口原装热卖现货
询价
INTERSIL
23+
DFN-10
10
现货库存
询价
Intersil
22+
10DFN
9000
原厂渠道,现货配单
询价
Intersil
23+
10DFN
9000
原装正品,支持实单
询价
更多ISL9014IRGCZ-T供应商 更新时间2024-5-30 14:13:00