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ISL9000IRBCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRBCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL9000IRBJZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRBJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL9000IRBLZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRBLZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL9000IRCCZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRCCZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

ISL9000IRCJZ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ

DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin

Intersil

Intersil Corporation

ISL9000IRCJZ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ

DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1µFto10µFwithESRofupto200mΩ. Thedeviceintegratesanind

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

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