Radiation Hardened, 5.0V/3.3V μ-Processor Supervisory Circuits

Features ▪ Electrically screened to SMD 5962-11213 ▪ QML qualified per MIL-PRF-38535 requirements ▪ Precision supply voltage monitor • 4.65V threshold in the ISL7x5AxH/BxH/CxH • 3.08V threshold in the ISL7x6AxH/BxH/CxH ▪ 200ms (typ) reset pulse width • Active high, active low, and open-drai

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RENESAS

瑞萨

SWITCHMODE??Power Rectifier

. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • Guaranteed Reverse Avalanche • Epoxy Meets UL94, VO at 1/

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MOTOROLA

摩托罗拉

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope featuring low forward voltage drop, absence of stored charge. and guaranteed reverse surge capability. The devices areintended foruse inswitched mode power supplies and high frequency circ

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PHI

PHI

300kHz, -5V/ADJ INVERTING, NEGATIVE OUTPUT CURRENT-MODE PWM REGULATOR

DESCRIPTION The ST735S/ST735T is a Bi-CMOS, inverting switch mode DC-DC regulator with internal Power MOSFET that generates a fixed -5V (S version) or a negative adjustable (T version) output voltage from a 4V (3.5V for the 735T) to 6.2V input voltage (9V for the 735T); is guaranteed an output cu

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STMICROELECTRONICS

意法半导体