ISL73041SEH中文资料Radiation Hardened 12V Half Bridge GaN FET Driver数据手册Renesas规格书

描述 Description

The ISL73041SEH is a PWM input 12V Half Bridge GaN FET Driver designed to drive low rDS(ON), high Qgs enhance mode Gallium Nitride (eGaN) FETs up to 1.5MHz operation for DC/DC switching regulators. An integrated programmable GaN FET gate drive voltage, high-side bootstrap switch and high gate drive current provide a compact and robust GaN FET half bridge driver.

The ISL73041SEH is designed to interface directly to the ISL73847SEH dual phase PWM buck controller to create a high efficiency point-of-load regulator to power many of the latest low voltage high current FPGA and DSP digital core rails.

The ISL73041SEH is offered in a 16 Ld Ceramic Leadless Chip Carrier (CLCC) hermetic package. It is specified to operate across an ambient temperature range of -55 °C to +125 °C.

特性 Features

• Up to 20V bootstrap voltage half-bridge driver
• Programmable 4.5V to 5.5V gate drive voltage
• Single tri-level PWM input control
• Separate source and sink driver outputs for independent gate turn-on and turn-off control
• High-side peak driver current: 5A
• Low-side peak driver current: 10A
• Separate high-side and low-side programmable dead time control
• Fast propagation delay with low mismatch
• Full military temperature operation -55 °C to 125 °C ambient range
• 16 Ld Hermetic CLCC Package

应用 Application

应用
• High current DC/DC Point-of-Load (POL) for FPGA and DSP supply rails
• 12V to 1V POL regulation
• GaN FET motor driver