ISL73024SEH数据手册Renesas中文资料规格书

描述 Description

The ISL70024SEH and ISL73024SEH are 200V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation up to 100krad(Si) High Dose Rate (HDR) and 75krad(Si) low Dose Rate (LDR). Applications for these devices include commercial aerospace, medical, and nuclear power generation.GaN’s exceptionally high electron mobility and low temperature coefficient allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and near zero QRR. The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for high reliability applications.

特性 Features

•
• Very low rDS(ON) 45mΩ (typical)
• Ultra low total gate charge 2.5nC (typical)
• SEE tolerance (VDS = 160V, VGS = 0V)
• Characterized at LET 86 MeV•cm2/mg
• Radiation hardness assurance testing (lot-by-lot)
• High dose rate (50-300rad(Si)/s): 100krad(Si)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
• Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
• Package area: 42mm2
• Full military-temperature range operation
• TA = -55°C to +125°C
• TJ = -55°C to +150°C

应用 Application

• Switching regulation
• Motor drives
• Relay drives
• Inrush protection
• Down hole drilling
• High reliability industrial