Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨

Accessory Kit for Modular & Microline Passive Oscilloscope Probes

文件：87.22 Kbytes 页数：1 Pages

POMONA

Pomona Electronics

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨

Radiation Hardened Low-Side GaN FET Driver

Features • Wide operating voltage range of 4.5V to 13.2V • Up to 14.7V logic inputs (regardless of VDD level) • Inverting and non-inverting inputs • Optimized to drive enhancement mode GaN FETs • Internal 4.5V regulated gate drive voltage • Independent outputs for adjustable turn-on/turn-of

文件：1.11304 Mbytes 页数：20 Pages

RENESAS

瑞萨