Rad-Hard, 5.0V/3.3V 關-Processor Supervisory Circuits

Rad-Hard, 5.0V/3.3V µ-Processor Supervisory Circuits This family of devices are radiation hardened 5.0V/3.3V supervisory circuits that reducethe complexity required to monitor supply voltages in microprocessor systems. These devices significantly improve accuracy and reliability relative to d

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INTERSIL

Radiation Hardened, 5.0V/3.3V μ-Processor Supervisory Circuits

Features ▪ Electrically screened to SMD 5962-11213 ▪ QML qualified per MIL-PRF-38535 requirements ▪ Precision supply voltage monitor • 4.65V threshold in the ISL7x5AxH/BxH/CxH • 3.08V threshold in the ISL7x6AxH/BxH/CxH ▪ 200ms (typ) reset pulse width • Active high, active low, and open-drai

文件：968.15 Kbytes 页数：26 Pages

RENESAS

瑞萨

GaAlAs Semiconductor Laser

文件：40.45 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon Controlled Rectifiers

Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. • Small Size • P

文件：107.63 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. 150.0 Watts Single Ended Package Style AM HIGH EFFICI

文件：36.69 Kbytes 页数：2 Pages

POLYFET