40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：521.659 Kbytes 页数：13 Pages

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40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：521.659 Kbytes 页数：13 Pages

RENESAS

瑞萨

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：521.659 Kbytes 页数：13 Pages

RENESAS

瑞萨

40V, 65A Enhancement Mode GaN Power Transistors

Features • Very low rDS(ON) 3.5mΩ (typical) • Ultra low total gate charge 19nC (typical) • ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si) • ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad

文件：521.659 Kbytes 页数：13 Pages

RENESAS

瑞萨