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ISL6612B中文资料带 Pre-POR OVP 的高级同步整流降压 MOSFET 驱动器数据手册Renesas规格书

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厂商型号

ISL6612B

参数属性

ISL6612B 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

带 Pre-POR OVP 的高级同步整流降压 MOSFET 驱动器

封装外壳

8-SOIC(0.154",3.90mm 宽)

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-22 21:33:00

人工找货

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ISL6612B规格书详情

描述 Description

The ISL6612B and ISL6613B are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors.The ISL6612B drives the upper gate to above rising VCC POR (7V), while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613B drives both upper and lower gates over a range of 5V to 12V. This drivevoltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. These drivers are optimized for POL DC/DC Converters for IBA Systems.An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial start-up.These drivers also feature a three-state PWM input which, working together with Intersil’s multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

特性 Features

• Pin-to-pin Compatible with HIP6601 SOIC family
• Low VCC Rising Threshold (7V) for IBA Applications.
• Body Diode Detection
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• Bootstrap Capacitor Overcharging Prevention
• 3A Sinking Current Capability
• Three-State PWM Input for Output Stage Shutdown
• Pre-POR Overvoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat Sinking
• Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)

应用 Application

• Optimized for POL DC/DC Converters for IBA Systems
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD

技术参数

  • 产品编号:

    ISL6612BCB-T

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    7V ~ 13.2V

  • 电流 - 峰值输出(灌入,拉出):

    1.25A,2A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    26ns,18ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    8-SOIC(0.154",3.90mm 宽)

  • 供应商器件封装:

    8-SOIC

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8SOIC

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
SOP8
7850
只做原装正品现货或订货假一赔十!
询价
INTERSILL
24+
NA/
4390
原装现货,当天可交货,原型号开票
询价
Renesas(瑞萨)
19+18+
QFN
11614
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Inters
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
INTERIL
22+
SOP8
5000
只做原装,假一赔十
询价
INTERSIL
2025+
SOP8
3365
全新原厂原装产品、公司现货销售
询价
INTERSIL
20+
SOP8PB
2960
诚信交易大量库存现货
询价
Intersil
22+
10DFN
9000
原厂渠道,现货配单
询价
Intersil
2023+
8-SOIC
810
安罗世纪电子只做原装正品货
询价
Intersil
20+
na
65790
原装优势主营型号-可开原型号增税票
询价