ISL6594D数据手册集成电路(IC)的栅极驱动器规格书PDF

厂商型号 |
ISL6594D |
参数属性 | ISL6594D 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC |
功能描述 | 高级同步降压 MOSFET 驱动器,带 3V PWM 接口和高级保护功能 |
封装外壳 | 8-SOIC(0.154",3.90mm 宽) |
制造商 | Renesas Renesas Technology Corp |
中文名称 | 瑞萨 瑞萨科技有限公司 |
数据手册 | |
更新时间 | 2025-8-7 23:00:00 |
人工找货 | ISL6594D价格和库存,欢迎联系客服免费人工找货 |
ISL6594D规格书详情
描述 Description
The ISL6594D is high frequency MOSFET driver specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. This driver combined with the ISL6594D Digital Multi-Phase Buck PWM controller and N-Channel MOSFETs forms a complete core-voltage regulator solution for advanced microprocessors.
The ISL6594D drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. The ISL6594D includes an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted.
The ISL6594D also features an input that recognizes a high-impedance state, working together with Intersil multiphase PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be utilized in a power system to protect the load from negative output voltage damage.
特性 Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Pin-to-pin Compatible with ISL6596
• Advanced Adaptive Zero Shoot-Through Protection
• Body Diode Detection
• Auto-zero of rDS(ON) Conduction Offset Effect
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
• 3A Sinking Current Capability
• Fast Rise/Fall Times and Low Propagation Delays
• Optimized for 3.3V PWM Input
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With Power Sequencing Requirement
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper Pad for Enhanced Heat Sinking
• Dual Flat No-Lead (DFN) Package
• Near Chip-Scale Package Footprint; Improves PCB Efficiency and Thinner in Profile
• Pb-Free (RoHS Compliant)
应用 Application
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
技术参数
- 制造商编号
:ISL6594D
- 生产厂家
:Renesas
- VIN/VPWM (最大值) (V)
:GND - 0.3V to 7V
- VDRIVE (V)
:4.5 to 13.2
- 每个驱动器UGATE拉电流|灌电流的输出 (A)
:1.25|2
- 每个驱动器LGATE拉电流|灌电流的输出 (A)
:2|3
- 相位电压最小值 (V)
:GND - 0.3VDC GND - 8V (<400ns)
- 相位电压最大值 (V)
:15VDC
- 无负载IS (最大值) (mA)
:N/A
- IS
:4.5 mA
- 资质级别
:Standard
- 温度范围
:0 to +70
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
RENESAS(瑞萨)/IDT |
24+ |
DFN10(3x3) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
INTERSIL |
24+ |
NA/ |
6000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INTERSIL |
2016+ |
QFN |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
INTERSI |
24+ |
QFN |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
询价 | ||
INTERSIL |
1836+ |
DFN10 |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INTERSIL |
08+ |
DFN-10 |
5700 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Renesa |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
Intersil |
2008 |
12 |
公司优势库存 热卖中!! |
询价 | |||
INTERSIL |
25+ |
6000 |
原厂原装,价格优势 |
询价 | |||
INTERSIL |
2223+ |
SOP-8 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 |