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ISL6612A中文资料Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP数据手册Renesas规格书

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厂商型号

ISL6612A

参数属性

ISL6612A 封装/外壳为8-SOIC(0.154",3.90mm 宽);包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 8SOIC

功能描述

Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP

封装外壳

8-SOIC(0.154",3.90mm 宽)

制造商

Renesas Renesas Technology Corp

中文名称

瑞萨 瑞萨科技有限公司

数据手册

下载地址下载地址二

更新时间

2025-9-22 19:00:00

人工找货

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ISL6612A规格书详情

描述 Description

The ISL6612A and ISL6613A are high frequency MOSFET drivers specifically designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. These drivers combined with HIP63xx or ISL65xx Multi-Phase Buck PWM controllers and N-Channel MOSFETs form complete core-voltage regulator solutions for advanced microprocessors. The ISL6612A drives the upper gate to 12V, while the lower gate can be independently driven over a range from 5V to 12V. The ISL6613A drives both upper and lower gates over a range of 5V to 12V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. An advanced adaptive zero shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize the dead time. These products add an overvoltage protection feature operational before VCC exceeds its turn-on threshold, at which the PHASE node is connected to the gate of the low side MOSFET (LGATE). The output voltage of the converter is then limited by the threshold of the low side MOSFET, which provides some protection to the microprocessor if the upper MOSFET(s) is shorted during initial startup. These drivers also feature a three-state PWM input which, working together with multi-phase PWM controllers, prevents a negative transient on the output voltage when the output is shut down. This feature eliminates the Schottky diode that is used in some systems for protecting the load from reversed output voltage events.

特性 Features

• Pin-to-pin Compatible with HIP6601 SOIC family
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• Body Diode Detection
• Auto-zero of rDS(ON) Conduction Offset Effect

应用 Application

• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD

技术参数

  • 制造商编号

    :ISL6612A

  • 生产厂家

    :Renesas

  • VDRIVE (V) (V)

    :5 to 12

  • Output Per Driver UGATE Source|Sink

    :1.25|2

  • Output Per Driver LGATE Source|Sink

    :2|3

  • Phase Voltage (Min)

    :GND - 0.3VDC GND - 8V (<400ns)

  • Phase Voltage (Max)

    :15VDC

  • No Load IS (Max)

    :4.5

  • IS (mA)

    :7.2

  • Qualification Level

    :Standard

  • Lead Count (#)

    :8

  • Pkg. Type

    :SOICN

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