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ISL6611AIRZ集成电路(IC)的栅极驱动器规格书PDF中文资料

ISL6611AIRZ
厂商型号

ISL6611AIRZ

参数属性

ISL6611AIRZ 封装/外壳为16-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 16QFN

功能描述

Phase Doubler with Integrated Drivers and Phase Shedding Function

封装外壳

16-VQFN 裸露焊盘

文件大小

227.02 Kbytes

页面数量

14

生产厂商 Intersil Corporation
企业简称

INTERSIL

中文名称

Intersil Corporation官网

原厂标识
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-6-26 22:59:00

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ISL6611AIRZ规格书详情

The ISL6611A utilizes Intersil’s proprietary Phase Doubler

scheme to modulate two-phase power trains with single

PWM input. It doubles the number of phases that Intersil’s

ISL63xx multiphase controllers can support. At the same

time, the PWM line can be pulled high to disable the

corresponding phase or higher phase(s) when the enable

pin (EN_PH) is pulled low. This simplifies the phase

shedding implementation. For layout simplicity and

improving system performance, the device integrates two 5V

drivers (ISL6609) and current balance function.

The ISL6611A is designed to minimize the number of analog

signals interfacing between the controller and drivers in high

phase count and scalable applications. The common COMP

signal, which is usually seen with conventional cascaded

configuration, is not required; this improves noise immunity

and simplifies the layout. Furthermore, the ISL6611A

provides low part count and a low cost advantage over the

conventional cascaded technique.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Bootstrapping of the upper gate driver is implemented via an

internal low forward drop diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6611A features 4A typical sink current for the lower

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power

loss caused by the self turn-on of the lower MOSFET due to

the high dV/dt of the switching node.

The ISL6611A also features an input that recognizes a

high-impedance state, working together with Intersil

multiphase PWM controllers to prevent negative transients

on the controlled output voltage when operation is

suspended. This feature eliminates the need for the Schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

In addition, the ISL6611A’s bootstrap function is designed to

prevent the BOOT capacitor from overcharging, should

excessively large negative swings occur at the transitions of

the PHASE node.

Features

• Proprietary Phase Doubler Scheme with Phase Shedding

Function (Patent Pending)

- Enhanced Light to Full Load Efficiency

• Patented Current Balancing with rDS(ON) Current Sensing

and Adjustable Gain

• Quad MOSFET Drives for Two Synchronous Rectified

Bridge with Single PWM Input

• Channel Synchronization and Interleaving Options

• Adaptive Zero Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention (ISL6611A)

• Supports High Switching Frequency (Up to 1MHz)

- Fast Output Rise and Fall

• Tri-State PWM Input for Output Stage Shutdown

• Phase Enable Input and PWM Forced High Output to

Interface with Intersil’s Controller for Phase Shedding

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Utilization, Thinner Profile

- Pb-Free (RoHS Compliant)

Applications

• High Current Low Voltage DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

• High Phase Count and Phase Shedding Applications

产品属性

  • 产品编号:

    ISL6611AIRZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 逻辑电压 - VIL,VIH:

    0.8V,2V

  • 电流 - 峰值输出(灌入,拉出):

    -,4A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    -40°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    16-VQFN 裸露焊盘

  • 供应商器件封装:

    16-QFN(4x4)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 16QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL有批量
24+
NA/
242
优势代理渠道,原装正品,可全系列订货开增值税票
询价
INTERSIL
2016+
SOP8
2600
只做原装,假一罚十,公司可开17%增值税发票!
询价
三年内
1983
只做原装正品
询价
INTERSIL
23+
SOP8
3200
全新原装、诚信经营、公司现货销售
询价
INTERSIL
23+
SOP
3519
询价
INTERSIL
23+
SOP-8
4862
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
INTERSIL
23+
SO8
90000
一定原装深圳现货
询价
INTERSIL
1922+
SOP8
6852
只做原装正品现货!或订货假一赔十!
询价
INTERIL
22+
SOP8
5000
只做原装,假一赔十
询价
INTERSIL
23+
QFN
89630
当天发货全新原装现货
询价