首页>ISL6611AIRZ>规格书详情
ISL6611AIRZ集成电路(IC)的栅极驱动器规格书PDF中文资料

厂商型号 |
ISL6611AIRZ |
参数属性 | ISL6611AIRZ 封装/外壳为16-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 16QFN |
功能描述 | Phase Doubler with Integrated Drivers and Phase Shedding Function |
封装外壳 | 16-VQFN 裸露焊盘 |
文件大小 |
227.02 Kbytes |
页面数量 |
14 页 |
生产厂商 | Intersil Corporation |
企业简称 |
INTERSIL |
中文名称 | Intersil Corporation官网 |
原厂标识 | ![]() |
数据手册 | |
更新时间 | 2025-6-26 22:59:00 |
人工找货 | ISL6611AIRZ价格和库存,欢迎联系客服免费人工找货 |
ISL6611AIRZ规格书详情
The ISL6611A utilizes Intersil’s proprietary Phase Doubler
scheme to modulate two-phase power trains with single
PWM input. It doubles the number of phases that Intersil’s
ISL63xx multiphase controllers can support. At the same
time, the PWM line can be pulled high to disable the
corresponding phase or higher phase(s) when the enable
pin (EN_PH) is pulled low. This simplifies the phase
shedding implementation. For layout simplicity and
improving system performance, the device integrates two 5V
drivers (ISL6609) and current balance function.
The ISL6611A is designed to minimize the number of analog
signals interfacing between the controller and drivers in high
phase count and scalable applications. The common COMP
signal, which is usually seen with conventional cascaded
configuration, is not required; this improves noise immunity
and simplifies the layout. Furthermore, the ISL6611A
provides low part count and a low cost advantage over the
conventional cascaded technique.
The IC is biased by a single low voltage supply (5V),
minimizing driver switching losses in high MOSFET gate
capacitance and high switching frequency applications.
Bootstrapping of the upper gate driver is implemented via an
internal low forward drop diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6611A features 4A typical sink current for the lower
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to
the high dV/dt of the switching node.
The ISL6611A also features an input that recognizes a
high-impedance state, working together with Intersil
multiphase PWM controllers to prevent negative transients
on the controlled output voltage when operation is
suspended. This feature eliminates the need for the Schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
In addition, the ISL6611A’s bootstrap function is designed to
prevent the BOOT capacitor from overcharging, should
excessively large negative swings occur at the transitions of
the PHASE node.
Features
• Proprietary Phase Doubler Scheme with Phase Shedding
Function (Patent Pending)
- Enhanced Light to Full Load Efficiency
• Patented Current Balancing with rDS(ON) Current Sensing
and Adjustable Gain
• Quad MOSFET Drives for Two Synchronous Rectified
Bridge with Single PWM Input
• Channel Synchronization and Interleaving Options
• Adaptive Zero Shoot-Through Protection
• 0.4Ω On-Resistance and 4A Sink Current Capability
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention (ISL6611A)
• Supports High Switching Frequency (Up to 1MHz)
- Fast Output Rise and Fall
• Tri-State PWM Input for Output Stage Shutdown
• Phase Enable Input and PWM Forced High Output to
Interface with Intersil’s Controller for Phase Shedding
• QFN Package
- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat
No Leads-Product Outline
- Near Chip-Scale Package Footprint; Improves PCB
Utilization, Thinner Profile
- Pb-Free (RoHS Compliant)
Applications
• High Current Low Voltage DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
• High Phase Count and Phase Shedding Applications
产品属性
- 产品编号:
ISL6611AIRZ
- 制造商:
Renesas Electronics America Inc
- 类别:
集成电路(IC) > 栅极驱动器
- 包装:
管件
- 驱动配置:
半桥
- 通道类型:
同步
- 栅极类型:
N 沟道 MOSFET
- 电压 - 供电:
4.5V ~ 5.5V
- 逻辑电压 - VIL,VIH:
0.8V,2V
- 电流 - 峰值输出(灌入,拉出):
-,4A
- 输入类型:
非反相
- 上升/下降时间(典型值):
8ns,8ns
- 工作温度:
-40°C ~ 125°C(TJ)
- 安装类型:
表面贴装型
- 封装/外壳:
16-VQFN 裸露焊盘
- 供应商器件封装:
16-QFN(4x4)
- 描述:
IC GATE DRVR HALF-BRIDGE 16QFN
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERSIL有批量 |
24+ |
NA/ |
242 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
INTERSIL |
2016+ |
SOP8 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
三年内 |
1983 |
只做原装正品 |
询价 | ||||
INTERSIL |
23+ |
SOP8 |
3200 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
INTERSIL |
23+ |
SOP |
3519 |
询价 | |||
INTERSIL |
23+ |
SOP-8 |
4862 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
询价 | ||
INTERSIL |
23+ |
SO8 |
90000 |
一定原装深圳现货 |
询价 | ||
INTERSIL |
1922+ |
SOP8 |
6852 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
INTERIL |
22+ |
SOP8 |
5000 |
只做原装,假一赔十 |
询价 | ||
INTERSIL |
23+ |
QFN |
89630 |
当天发货全新原装现货 |
询价 |