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ISL6611ACRZ集成电路(IC)的栅极驱动器规格书PDF中文资料

ISL6611ACRZ
厂商型号

ISL6611ACRZ

参数属性

ISL6611ACRZ 封装/外壳为16-VQFN 裸露焊盘;包装为管件;类别为集成电路(IC)的栅极驱动器;产品描述:IC GATE DRVR HALF-BRIDGE 16QFN

功能描述

Phase Doubler with Integrated Drivers and Phase Shedding Function

封装外壳

16-VQFN 裸露焊盘

文件大小

227.02 Kbytes

页面数量

14

生产厂商 Intersil Corporation
企业简称

INTERSIL

中文名称

Intersil Corporation官网

原厂标识
INTERSIL
数据手册

下载地址一下载地址二到原厂下载

更新时间

2025-8-4 20:00:00

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ISL6611ACRZ规格书详情

The ISL6611A utilizes Intersil’s proprietary Phase Doubler

scheme to modulate two-phase power trains with single

PWM input. It doubles the number of phases that Intersil’s

ISL63xx multiphase controllers can support. At the same

time, the PWM line can be pulled high to disable the

corresponding phase or higher phase(s) when the enable

pin (EN_PH) is pulled low. This simplifies the phase

shedding implementation. For layout simplicity and

improving system performance, the device integrates two 5V

drivers (ISL6609) and current balance function.

The ISL6611A is designed to minimize the number of analog

signals interfacing between the controller and drivers in high

phase count and scalable applications. The common COMP

signal, which is usually seen with conventional cascaded

configuration, is not required; this improves noise immunity

and simplifies the layout. Furthermore, the ISL6611A

provides low part count and a low cost advantage over the

conventional cascaded technique.

The IC is biased by a single low voltage supply (5V),

minimizing driver switching losses in high MOSFET gate

capacitance and high switching frequency applications.

Bootstrapping of the upper gate driver is implemented via an

internal low forward drop diode, reducing implementation

cost, complexity, and allowing the use of higher

performance, cost effective N-Channel MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

The ISL6611A features 4A typical sink current for the lower

gate driver, enhancing the lower MOSFET gate hold-down

capability during PHASE node rising edge, preventing power

loss caused by the self turn-on of the lower MOSFET due to

the high dV/dt of the switching node.

The ISL6611A also features an input that recognizes a

high-impedance state, working together with Intersil

multiphase PWM controllers to prevent negative transients

on the controlled output voltage when operation is

suspended. This feature eliminates the need for the Schottky

diode that may be utilized in a power system to protect the

load from negative output voltage damage.

In addition, the ISL6611A’s bootstrap function is designed to

prevent the BOOT capacitor from overcharging, should

excessively large negative swings occur at the transitions of

the PHASE node.

特性 Features

• Proprietary Phase Doubler Scheme with Phase Shedding

Function (Patent Pending)

- Enhanced Light to Full Load Efficiency

• Patented Current Balancing with rDS(ON) Current Sensing

and Adjustable Gain

• Quad MOSFET Drives for Two Synchronous Rectified

Bridge with Single PWM Input

• Channel Synchronization and Interleaving Options

• Adaptive Zero Shoot-Through Protection

• 0.4Ω On-Resistance and 4A Sink Current Capability

• 36V Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention (ISL6611A)

• Supports High Switching Frequency (Up to 1MHz)

- Fast Output Rise and Fall

• Tri-State PWM Input for Output Stage Shutdown

• Phase Enable Input and PWM Forced High Output to

Interface with Intersil’s Controller for Phase Shedding

• QFN Package

- Compliant to JEDEC PUB95 MO-220 QFN-Quad Flat

No Leads-Product Outline

- Near Chip-Scale Package Footprint; Improves PCB

Utilization, Thinner Profile

- Pb-Free (RoHS Compliant)

Applications

• High Current Low Voltage DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

• High Phase Count and Phase Shedding Applications

产品属性

  • 产品编号:

    ISL6611ACRZ

  • 制造商:

    Renesas Electronics America Inc

  • 类别:

    集成电路(IC) > 栅极驱动器

  • 包装:

    管件

  • 驱动配置:

    半桥

  • 通道类型:

    同步

  • 栅极类型:

    N 沟道 MOSFET

  • 电压 - 供电:

    4.5V ~ 5.5V

  • 逻辑电压 - VIL,VIH:

    0.8V,2V

  • 电流 - 峰值输出(灌入,拉出):

    -,4A

  • 输入类型:

    非反相

  • 上升/下降时间(典型值):

    8ns,8ns

  • 工作温度:

    0°C ~ 125°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    16-VQFN 裸露焊盘

  • 供应商器件封装:

    16-QFN(4x4)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 16QFN

供应商 型号 品牌 批号 封装 库存 备注 价格
INTERSIL
24+
NA/
2820
优势代理渠道,原装正品,可全系列订货开增值税票
询价
Renesas Electronics America In
25+
16-VQFN 裸露焊盘
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
RENESAS(瑞萨)/IDT
24+
QFN16EP(4x4)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
INTERSIL
2223+
QFN
26800
只做原装正品假一赔十为客户做到零风险
询价
INTERSIL
2450+
QFN16
6540
只做原厂原装正品终端客户免费申请样品
询价
INTERSIL
2023+
QFN
5897
专注全新正品,优势现货供应
询价
Intersil
22+
16QFN
9000
原厂渠道,现货配单
询价
Intersil
24+
16-QFN(4x4)
65200
一级代理/放心采购
询价
INTERSIL
23+
QFN16
17897
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
INTERSIL
23+
QFN16
7000
询价