NTE6415

BidirectionalThyristorDiodes(SIDAC)

Description: TheNTE6415throughNTE6419SIDACdevicesaresiliconbilateralvoltagetriggeredswitcheswithgreaterpowerhandlingcapabilitiesthanstandardDIACs.UponapplicationofavoltageexceedingtheSIDACbreakovervoltagepoint,theSIDACswitchesonthroughanegativeresistancere

NVD6415AN

MOSFET–Power,N-Channel100V,23A,55m

Features •LowRDS(on) •HighCurrentCapability •100AvalancheTested •NVDPrefixforAutomotiveandOtherApplicationsRequiring UniqueSiteandControlChangeRequirements;AEC−Q101 QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

NVD6415AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=23A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=55mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

NVD6415ANL

N-ChannelPowerMOSFET100V,23A,56mLogicLevel

PJS6415

20VP-ChannelEnhancementModeMOSFET

PJS6415

20VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-4.5V,ID@-5.2A

PJS6415A

20VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-4.5V,ID@-5.2A

PJS6415A-AU

20VP-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@-4.5V,ID@-5.2A

PJS6415AE

20VP-ChannelEnhancementModeMOSFET??ESDProtected

PSU6415

THAS231M150AA0C