MAX6410BS

VoltageDetectorsin4-Bump(2X2)Chip-ScalePackage

GeneralDescription TheMAX6406–MAX6411isafamilyofultra-lowpowercircuitsusedformonitoringbattery,power-supply,andregulatedsystemvoltages.Eachdetectorcontainsaprecisionbandgapreferencecomparatorandistrimmedtospecifiedtripthresholdvoltages.Thesedevicesprovideex

MDA6410C

0.54INCH(13.7MM)14SEGMENT,DUALDIGITALPHA-NUMERICSTICKDISPLAY

MIS6410

N-Channel30V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •LowOn-Resistance •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •DC/DCConverters,HighSpeedSwitching

MSQ6410C

0.56INCH(14.2MM)FOURDIGITSTICKDISPLAY

MSQC6410C

14mm(0.56inch)FourDigitCLOCKSTICKDISPLAY

Features •BrightBoldSegments •CommonAnode/Cathode •LowPowerConsumption •LowCurrentCapability •NeutralSegments •GreyFace •EpoxyEncapsulatedPCB •HighPerformance •HighReliability Applications •Appliances •Automotive •Instrumentation •ProcessControl

MSQC6410W

14mm(0.56inch)FourDigitCLOCKSTICKDISPLAY

Features •BrightBoldSegments •CommonAnode/Cathode •LowPowerConsumption •LowCurrentCapability •EpoxyEncapsulatedPCB •HighPerformance •HighReliability Applications •Appliances •Automotive •Instrumentation •ProcessControl

MST6410C

0.56INCH(14.2MM)THREEDIGITSTICKDISPLAY

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NTB6410AN

N-ChannelPowerMOSFET100V,76A,13m廓

NTB6410AN

N-ChannelPowerMOSFET

NTB6410AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=76A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=13mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.