High Voltage Input Precision, Low Noise FGA??Voltage References

The ISL21009MEP FGA™ voltage references are extremely low power, high precision, and low noise voltage references fabricated on Intersil’s proprietary Floating Gate Analog technology. The ISL21009MEP features very low noise (4.5µVP-P for 0.1Hz to 10Hz), low operating current (180µA, Max), and 3ppm

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Intersil

High Voltage Input Precision, Low Noise FGA™ Voltage References

Features • Specifications per DSCC VID V62/08629 • Full Mil-Temp Electrical Performance from -55°C to +125°C • Controlled Baseline with One Wafer Fabrication Site and One Assembly/Test Site • Full Homogeneous Lot Processing in Wafer Fab • No Combination of Wafer Fabrication Lots in Assembly

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RENESAS

瑞萨

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

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PHI

飞利浦

NPN microwave power transistor

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange. FEATURES • Diffused emitter ballasting resistors • Self-aligned process entirely ion implanted and gold sandwich metallization • optimum temp

文件：55.72 Kbytes 页数：8 Pages

PHI

飞利浦

GaAs Varactor Diodes Abrupt Junction

Description Microsemi’s GaAs abrupt junction varactors are fabricated from epitaxial layers grown at Microsemi using Chemical Vapor Deposition. The layers are processed using proprietary techniques resulting in a high Q factor and very repeatable tuning curves. The diodes are available in a varie

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Microsemi

美高森美