IGBT

DESCRIPTION · Low VCE(ON) and Switching Losses · High Speed Switching · Low Power Loss APPLICATIONS · Welding · PFC

文件：387.93 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS)

FEATURES ● Complementary to KTA965 APPLICATIONS ■ Audio Power Amplifier Applications. ■ Drive Stage Amplifier Applications.

文件：40.34 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

3.6V, 1W Autoramping Power Amplifier for 900MHz Applications

General Description The MAX2235 low-voltage, silicon RF power amplifier (PA) is designed for use in the 900MHz frequency band. It operates directly from a single +2.7V to +5.5V supply, making it suitable for use with 3-cell NiCd or 1-cell Li-Ion batteries. The device delivers +30dBm (1W) typical

文件：149.59 Kbytes 页数：8 Pages

MAXIM

美信

Evaluation Kit

文件：160.12 Kbytes 页数：4 Pages

MAXIM

美信