IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=3.2V@IC= 82A · High Power Density · Low Gate Drive Requirement APPLICATIONS · Uninterrupted Power Supply · Motor Drives · PFC Circuits · Welding Machines · SMPS

文件：563.12 Kbytes 页数：3 Pages

ISC

无锡固电

TRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • Complementary to KTB1367.

文件：271.22 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • Collector Power Dissipation- : PC= 30W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) • Complement to Type KTB1367 APPLICATIONS • Designed for general purpose applic

文件：151.14 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • Collector Power Dissipation- : PC= 30W@ TC= 25℃ • Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) • Complement to Type KTB1367 APPLICATIONS • Designed for general purpose applic

文件：4.73533 Mbytes 页数：2 Pages

KISEMICONDUCTOR