Trench gate Field-Stop IGBT

FEATURES · Low Saturation Voltage:VCE(sat)=2.5V@IC=20A · High Current Capability · High Input Impedance APPLICATIONS · Synchronous Rectification in SMPS · Automotive Chargers · UPS,PFC · Solar Converters · Welding Converters

文件：371.86 Kbytes 页数：4 Pages

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Moulded Case Circuit Breakers 16-2500 Amperes for IEC 60947-2 Applications

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Silicon N-Channel MOS FET

* High breakdown voltage (VDSS= 1500 V) * High speed switching * Low drive current * No Secondary Breakdown * Suitable for Switching regulator, DC-DC converter

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HITACHIHitachi Semiconductor

日立日立公司

1500V - 2A - MOS FET High Speed Power Switching

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RENESAS

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