Silicon N-Channel MOS FET

* High breakdown voltage (VDSS= 1500 V) * High speed switching * Low drive current * No Secondary Breakdown * Suitable for Switching regulator, DC-DC converter

文件：45.51 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

日立日立公司

1500V - 2A - MOS FET High Speed Power Switching

文件：260.92 Kbytes 页数：7 Pages

RENESAS

瑞萨

DUAL PREAMPLIFIER FOR 3V USING

DUAL PREAMPLIFIER FOR 3V USING The KA2225 is a monolithic integrated circuit consisting of a dual equalizer amplifier, and it is suitable for 3V stereo radio cassettes. FEATURES

文件：125.43 Kbytes 页数：3 Pages

Samsung

三星

DUAL PREAMPLIFIER FOR 3V USING

DUAL PREAMPLIFIER FOR 3V USING The KA2225 is a monolithic integrated circuit consisting of a dual equalizer amplifier, and it is suitable for 3V stereo radio cassettes. FEATURES

文件：125.43 Kbytes 页数：3 Pages

Samsung

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12-Bit, 10Msps Low Power 3V ADC

文件：515.49 Kbytes 页数：20 Pages

LINER

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