Trench gate Field-Stop IGBT

DESCRIPTION ·Low Saturation Voltage:VCE(sat)=2.0V@IC=30A ·High Current Capability ·High Input Impedance ·Fast Switching APPLICATIONS ·Synchronous Rectification in SMPS ·Automotive Chargers ·UPS,PFC ·High Voltage Auxiliaries

文件：372.21 Kbytes 页数：4 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

文件：1.04338 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE)

GENERAL PURPOSE APPLICATION. FEATURES • High Breakdown Voltage : VCEO=100V. • Low Collector Saturation Voltage :VCE(sat)=2.0V(Max.). • Complementary to KTA1038.

文件：275.34 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

NPN Transistors

文件：1.09303 Mbytes 页数：2 Pages

KEXIN

科信电子