N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 72A@ TC=25℃ · Drain Source Voltage -VDSS= 300V(Min) · Static Drain-Source On-Resistance -RDS(on) = 19mΩ(Max)@VGS= 10V APPLICATIONS ·High Voltage Power Supplies ·Capacitor Discharge ·Pulse Circuits

文件：343.9 Kbytes 页数：2 Pages

ISC

无锡固电

DC Controlled Geometry Correction System for Continuous Sync Monitors

文件：253.67 Kbytes 页数：11 Pages

NSC

国半

DC Controlled Geometry Correction System for Continuous Sync Monitors

文件：253.67 Kbytes 页数：11 Pages

NSC

国半

GaAlAs Infrared Emitting Diodes

DESCRIPTION This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip. The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°. This device is a UL recognized component for smoke ala

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PERKINELMER