VTE1295

GaAlAs Infrared Emitting Diodes

DESCRIPTION This5mmdiameter,customlenseddevicecontainsamediumarea,singlewirebonded,GaAlAs,880nmhighefficiencyIREDchip.Thecustomlensallowsthiscosteffectivedevicetohaveaverynarrowhalfpowerbeamemissionof±8°.ThisdeviceisaULrecognizedcomponentforsmokeala

VTE1295H

Package：径向；包装：散装 类别：光电器件 LED 发射器 - 红外，紫外，可见光 描述：IR LED CW-PULSD 5.5MW/CM2 NRROW

1295

ShortyWindow“ViewPort”Plugs

1295AA

ShortyWindow“ViewPort”Plugs

1295C

CustomerSpecification

Construction Diameters(In) 1)Component15X1COND a)Conductor22(7/30)AWGTinnedCopper0.030 b)Insulation0.010Wall,Nom.PVC,SemiRigid0.050 (1)ColorCodeAlphaWireColorCodeD CondColorCondColorCondColor 1BLACK3WHITE5ORANGE 2RED4GREEN 2)CableAssembly5Comp

CLV1295A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CLV1295A-LF

Voltage-ControlledOscillatorSurfaceMountModule

CM1295

S-8SingleContactBayonetBase

S-8SingleContactBayonetBase ChicagoMiniatureLampreservestherighttomakespecificationrevisionsthatenhancethedesignand/orperformanceoftheproduct

CM1295

SingleContactBayonetBase

S-8SingleContactBayonetBase

ISF1295

N-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=72A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=19mΩ(Max)@VGS=10V APPLICATIONS ·HighVoltagePowerSupplies ·CapacitorDischarge ·PulseCircuits