N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 30A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 215mΩ(Max) @ VGS= 10V APPLICATIONS ·Current Regulators ·Solid State Circuit Breakers

文件：2.9793 Mbytes 页数：9 Pages

ISC

无锡固电

SNUBBERLESS TRIAC

DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology,housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppres sion of R-C network, and is suitable for applications such as phase control and static switch on inductive

文件：316.41 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Silicon NPN Planar RF Transistor

Features • Low power applications • Very low noise figure • High transition frequency fT = 12 GHz • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     For low noise applications such as preamplifiers, mixers and oscillators in analog a

文件：81.41 Kbytes 页数：6 Pages

VISHAYVishay Siliconix

威世威世科技公司

P-Channel Enhancement-Mode Vertical DMOS Power FETs???

文件：139.4 Kbytes 页数：4 Pages

SUTEX