isc NPN Power Transistor Die

文件：174.32 Kbytes 页数：1 Pages

ISC

无锡固电

isc Silicon NPN Power Transistors

DESCRIPTION • Low Collector Saturation Voltage : VCE(sat)=0.3V(Max)@ IC= 8A • Good Linearity of hFE • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for relay drivers , high-speed inverters, converters,and other general h

文件：275.7 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Recommend for 60W audio freque

文件：275.79 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Recommend for 60W audio freque

文件：288.1 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) • Good Linearity of hFE • High Current Capability • Wide Area of Safe Operation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Recommend for 60W audio freque

文件：284.96 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·Hig

文件：276 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·Good Linearity of hFE ·High Current Capability ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·Hig

文件：276.34 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage— : VCEO(SUS) ≥ 30 V • DC Current Gain— : hFE = 50(Min) @ IC= 0.5 A • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Low power audio amplifier • Low current high speed switching a

文件：266.54 Kbytes 页数：2 Pages

ISC

无锡固电