SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 0.75Ω@VGS=20V Tj=25℃ ·Low Capacitances ·Avalanche Ruggednes APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High Voltage DC-DC Converters ·Batterry Chargers

文件：751.68 Kbytes 页数：5 Pages

ISC

无锡固电

All-SiC Power Module

FEATURES ·VDS=1200V,RDS(on)= 5.3mΩ（max） ·Zero Reverse Recovery Current from Diode ·Zero Turn-Off Tail Current from MOSFET ·High-Frequency Operation ·Ease of Paralleling ·Ultra Low Loss APPLICATIONS ·Solar and Wind Inverters ·UPS and SMPS ·Motor Drives

文件：804.59 Kbytes 页数：8 Pages

ISC

无锡固电

1.8V, 3.3V 10/100BASETX/FX Physical Layer Transceiver

General Description The KS8001 is a 10BASE-T/100BASE-TX/FX Physical Layer Transceiver, operating the core at 1.8 volts to meet low voltage and low power requirements. The solution provides MII/RMII/SMII interfaces to transmit and receive data. A unique mixed-signal design extends signaling dist

文件：623.79 Kbytes 页数：44 Pages

Micrel

麦瑞半导体

1.8V, 3.3V 10/100BASETX/FX Physical Layer Transceiver

General Description The KS8001 is a 10BASE-T/100BASE-TX/FX Physical Layer Transceiver, operating the core at 1.8 volts to meet low voltage and low power requirements. The solution provides MII/RMII/SMII interfaces to transmit and receive data. A unique mixed-signal design extends signaling dist

文件：623.79 Kbytes 页数：44 Pages

Micrel

麦瑞半导体