SiC N-Channel MOSFET

FEATURES ·Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V ·Very fast and robust intrinsic body diode ·Extremely low gate charge and input capacitances APPLICATIONS ·Power supply for renewable energy systems ·High frequency DC-DC conve

文件：364.8 Kbytes 页数：3 Pages

ISC

无锡固电

2.95V to 6V Input, 3A Output, 2MHz, Synchronous Step-Down Converter

General Description The RT8079 is a high efficiency step-down converter and capable of delivering 3A output current over a wide input voltage range from 2.95V to 6V. The RT8079 provides accurate regulation for a variety of loads with ±3 accuracy. For reducing inductor size, it provides up

文件：199.67 Kbytes 页数：13 Pages

RICHTEK

立锜科技

Programmable voltage and current linear battery management chip

文件：1.02465 Mbytes 页数：7 Pages

SHOUDING

首鼎

Magnet Wire, #26 Sol BC, Polyester/Amide-imide Polymer Ins

Product Description Magnet Wire, 26AWG (Solid) Bare Copper, Polyester/Amide-imide Polymer Insulation, CLASS 200 MW 35-C

文件：231.99 Kbytes 页数：2 Pages

BELDEN

百通

Dual 260 MHz Gain = 2.0 & 2.2 Buffer

PRODUCT DESCRIPTION The AD8079 is a dual, low power, high speed buffer designed to operate on ±5 V supplies. The AD8079’s pinout offers excellent input and output isolation compared to the traditional dual amplifier pin configuration. With two ac ground pins separating both the inputs and outputs

文件：348.48 Kbytes 页数：12 Pages

AD

亚德诺

Dual 260 MHz Gain = 2.0 & 2.2 Buffer

文件：288.67 Kbytes 页数：12 Pages

AD

亚德诺