ISC12N90C资料datasheet下载供应商报价第3页-114ic电子网

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零件型号	下载订购	功能描述	制造商上传企业	LOGO
IXTH12N90	文件：102.81 Kbytes Page：4 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS
IXTH12N90	文件：372.38 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES •DrainCurrentID=12A@TC=25℃ •DrainSourceVoltage-:VDSS=900V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=0.9Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariations	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTM12N90	文件：302.97 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXTM12N90	文件：102.81 Kbytes Page：4 Pages	MegaMOSFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Lowpackageinductance(	IXYS IXYS Corporation	IXYS

更多ISC12N90C供应商更新时间2025-7-28 15:59:00