2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM

OVERVIEW The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial E2PROM. It is fabricated using ISSI’s advanced CMOS E2PROM technology. The IS93C56-3 provides efficient non-volatile read/write memory arranged as 128 registers of 16 bits each. Seven 11-bit instructions control the operation of

文件：83.52 Kbytes 页数：10 Pages

ISSI

矽成半导体

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

文件：131.05 Kbytes 页数：16 Pages

ISSI

矽成半导体

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

文件：131.05 Kbytes 页数：16 Pages

ISSI

矽成半导体

2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM

DESCRIPTION The IS93C56A/66A are 2kb/4kb non-volatile, ISSI ® serial EEPROMs. They are fabricated using an enhanced CMOS design and process. The IS93C56A/66A contain power-efficient read/write memory, and organization of either 256/512 bytes of 8 bits or 128/256 words of 16 bits. When the ORG pin

文件：131.05 Kbytes 页数：16 Pages

ISSI

矽成半导体