64Mb Async/Page PSRAM

The IS66/67WVE4M16EALL/BLL/CLL and IS66/67WVE4M16TALL/BLL/CLL integrated memory device containing 64Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 4M words by 16 bits. The device includes several power saving modes: Partial Array Refresh mode where data is retai • Asynchronous and page mode interface\r\n• Page mode read access\r\n• Low Power Consumption\r\n• Low Power Feature\r\n• Operating temperature Range\r\n• Packages:\r\n - 48-ball TFBGA;

ISSI

矽成半导体

1.8V Core Async/Page PSRAM

文件：597.93 Kbytes 页数：30 Pages

ISSI

矽成半导体

Asynchronous and page mode interface

文件：663.83 Kbytes 页数：32 Pages

ISSI

矽成半导体

Asynchronous and page mode interface

文件：663.83 Kbytes 页数：32 Pages

ISSI

矽成半导体